On July 6, 2026, a paper by Professor Masaki Mito of the Department of Basic Sciences, Faculty of Engineering, and his research group was selected as an Editor's Pick by the Journal of Applied Physics, published by the American Institute of Physics (AIP).
The research succeeded in artificially controlling the metal–insulator transition phenomenon through a process of inserting shear strain under high pressure. This achievement goes beyond experimental studies that simply introduce defects; it demonstrates a successful example showing that strain insertion into the crystal lattice is effective for manipulating electronic states. Combined with previous research on superconductors and magnetic materials, this work could lead to the development of new operating principles for electronic device materials.
| Awardee Representative | Professor Dr. Masaki Mito and others (Department of Basic Sciences, Faculty of Engineering) |
| Presentation Title | Shear strain effects on metal–insulator transition of vanadium oxide V₂O₃ |
| Journal | Journal of Applied Physics, 140, 015901 (2026) |
| DOI | 10.1063/5.0332820 |
◇For more details, click here.
Schematic illustration of the metal–insulator transition in the transition‑metal oxide V₂O₃ and an overview of the strain‑induced expansion of the two‑phase coexistence temperature region
